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Title: Finfet... το μέλλον των τρανζίστορ; Post by: fugiFOX on May 22, 2008, 10:48:05 am Το σημερινό trend στην κατασκευή επεξεργαστών είναι στα 40nm.
Όμως το όριο κατασκευής της υπάρχουσας τεχνολογίας ορίζεται στα 32nm! Είμαστε λοιπόν λίγο πριν το τέλος του νόμου του Moore? Οι περισσότεροι εναποθέτουν τις ελπίδες τους στα multi-gate τρανζίστορς με κυριότερο εκφραστή να αποτελεί το Finfet. (http://upload.wikimedia.org/wikipedia/commons/b/bb/Doublegate_FinFET.PNG) The term FinFET was coined by University of California, Berkeley researchers (Profs. Chenming Hu, Tsu-Jae King-Liu and Jeffrey Bokor) to describe a nonplanar, double-gate transistor built on an SOI susbtrate,[4], based on the earlier DELTA (single-gate) transistor design. [5] The distinguishing characteristic of the FinFET is that the conducting channel is wrapped around a thin silicon "fin", which forms the body of the device. The dimensions of the fin determine the effective channel length of the device. In current usage the term FinFET has a less precise definition. Among microprocessor manufacturers, AMD, IBM, and Motorola describe their double-gate development efforts as FinFET development whereas Intel avoids using the term to describe their closely related tri-gate[1] architecture. In the technical literature, FinFET is used somewhat generically to describe any fin-based, multigate transistor architecture regardless of number of gates. A 25-nm transistor operating on just 0.7 Volt was demonstrated in December 2002 by Taiwan Semiconductor Manufacturing Company. The "Omega FinFET" design, named after the similarity between the Greek letter "Omega" and the shape in which the gate wraps around the source/drain structure, has a gate delay of just 0.39 picosecond (ps) for the N-type transistor and 0.88 ps for the P-type. Περισσότερα: http://en.wikipedia.org/wiki/Trigate_transistors |